MMIC AMPLIFIER. SGA2186Z Datasheet


SGA2186Z AMPLIFIER. Datasheet pdf. Equivalent


Part Number

SGA2186Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 5 Pages
Datasheet
Download SGA2186Z Datasheet


SGA2186Z
SGA2186ZSGA2186Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA2186Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
12
9
6
3
0
0
Gain & Return Loss vs. Freq. @TL=+25°C
GAIN
IRL
ORL
1234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
9.2
10.2
11.2 dB 850MHz
9.3 dB 1950MHz
8.9 dB 2400MHz
Output Power at 1dB Compression
7.5
dBm
850 MHz
6.7
dBm
1950 MHz
Output Third Intercept Point
20.0
dBm
850 MHz
19.6
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
18.2
dB 1950MHz
Output Return Loss
27.2 dB 1950MHz
Noise Figure
4.4 dB 1950MHz
Device Operating Voltage
1.9 2.2 2.5 V
Device Operating Current
17 20 23 mA
Thermal Resistance
97
°C/W
junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 5

SGA2186Z
SGA2186Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
40 mA
4V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
dB
dBm
dBm
10.3
20.7
7.4
10.2
20.0
7.5
9.3
19.6
6.7
8.9
19.4
6.3
Input Return Loss
dB 21.4 20.7 18.7 18.2 16.6
Output Return Loss
dB 18.6 19.8 21.6 27.2 26.7
Reverse Isolation
dB 15.1 15.2 15.4 16.2 16.6
Noise Figure
dB
4.2 4.3 4.4 4.6
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140Ω, TL=25°C, ZS=ZL=50Ω
3500 MHz
12.3
24.0
17.5
OIP3 vs. Frequency
VD= 2.2 V, ID= 20 mA
30
25 TL
P vs. Frequency
1dB
VD= 2.2 V, ID= 20 mA
10
8 TL
20
15
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
6
4
TL=+25ºC
2
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
7
6
TL=+25ºC
5
4
TL=+25ºC
3
2
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915


Features SGA2186ZSGA2186Z DC to 5000MHz, CASCADAB LE SiGe HBT MMIC AMPLIFIER Package: SOT -86 Product Description The SGA2186Z i s a high performance SiGe HBT MMIC Ampl ifier. A Darlington configuration featu ring one-micron emitters provides high FT and excellent thermal performance. T he heterojunction increases breakdown v oltage and minimizes leakage current be tween junctions. Cancellation of emitte r junction non-linearities results in h igher suppression of intermodulation pr oducts. Only two DC-blocking capacitors , a bias resistor, and an optional RF c hoke are required for operation. Gain (dB) Return Loss (dB) Optimum Technolo gy Matching® Applied GaAs HBT GaAs MES FET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS 12 9 6 3 0 0 Gain & Ret urn Loss vs. Freq. @TL=+25°C GAIN IRL ORL 1234 Frequency (GHz) 0 -10 -20 -30 -40 5 Features  Broadband Operatio n: DC to 5000 MHz  Cascadable 50Ω Operates from Single Supply  Low Thermal Resistance Package Applicatio.
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