MMIC AMPLIFIER. SGA2163Z Datasheet


SGA2163Z AMPLIFIER. Datasheet pdf. Equivalent


SGA2163Z


CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2163ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier

SGA2163Z

DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

Package: SOT-363

Product Description
The SGA2163Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Gain (dB) Return Loss (dB)

Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
 SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS

Gain & Return Loss vs. Freq. @TL=+25°C 12
GAIN 9
6 IRL
3 ORL
0 01234 Frequency (GHz)

0 -10 -20
-30 -40 5

Features
 Broadband Operation: DC to 5000 MHz
 Cascadable 50  Operates from Single Supply  Low Thermal Resistance
Package
Applications
 PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite

Parameter

Specification Min. Typ. Max.

Unit

Condition

Small Signal Gain

9.5

10.5

11.5 dB 850MHz

9.8 dB 1950MHz

9.6 dB 2400MHz

Output Power at 1dB Compression

7.1

dBm

850 MHz

6.2

dBm

1950 MHz

Output Third Intercept Point

21.0

dBm

850 ...



SGA2163Z
SGA2163ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA2163Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA2163Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @TL=+25°C
12
GAIN
9
6 IRL
3 ORL
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
9.5
10.5
11.5 dB 850MHz
9.8 dB 1950MHz
9.6 dB 2400MHz
Output Power at 1dB Compression
7.1
dBm
850 MHz
6.2
dBm
1950 MHz
Output Third Intercept Point
21.0
dBm
850 MHz
18.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
22.5
dB 1950MHz
Output Return Loss
24.8 dB 1950MHz
Noise Figure
4.4 dB 1950MHz
Device Operating Voltage
1.9 2.2 2.5 V
Device Operating Current
17 20 23 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA2163Z
SGA2163Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
40 mA
4V
+18 dBm
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz
Small Signal Gain
dB
10.7 10.6 10.5
9.8
9.6
Output Third Order Intercept Point
dBm
20.9 21.0 18.0 16.9
Output Power at 1dB Compression
dBm
7.2 7.1 6.2 5.6
Input Return Loss
dB
18.7
19.8
20.3
22.5
22.1
Output Return Loss
dB 17.2 19.1 22.3 24.8 23.4
Reverse Isolation
dB 15.6 15.4 15.5 16.1 16.4
Noise Figure
dB
4.2 4.1 4.4 4.8
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
3500 MHz
9.3
16.0
27.6
16.9
OIP vs. Frequency
3
VD= 2.2 V, ID= 20 mA
30
P vs. Frequency
1dB
VD= 2.2 V, ID= 20 mA
10
25
T
L
8
TL
20
15
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
6
4
TL=+25ºC
2
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
7
6
TL=+25ºC
5
4
TL=+25ºC
3
2
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011




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