SGA3286Z MMIC AMPLIFIER Datasheet

SGA3286Z Datasheet, PDF, Equivalent


Part Number

SGA3286Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 7 Pages
Datasheet
Download SGA3286Z Datasheet


SGA3286Z
SGA3286ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3286Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. At 850MHz and 35mA, the
SGA3286Z typically provides +12.2dBm of 1dB compressed power using a single
positive voltage supply. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
VD= 2.6 V, ID= 35 mA (Typ.)
20
15 GAIN
IRL
10
ORL
5
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50
Patented SiGe Technology
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless, Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
13.0
14.5
16.0
dB 850MHz
13.0
dB 1950MHz
12.2
dB 2400MHz
Output Power at 1dB Compression
12.2
dBm 850MHz
11.3
dBm
1950 MHz
Output Third Intercept Point
25.5
dBm
850 MHz
24.8
dBm
1950 MHz
Bandwidth Determined by Return
Loss (>10dB)
5000
MHz
Input Return Loss
19.2
dB 1950MHz
Output Return Loss
22.7
dB 1950MHz
Noise Figure
3.8 dB 1950MHz
Device Operating Voltage
2.3 2.6 2.9 V
Device Operating Current
31 35 39 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68, TL=25°C, ZS=ZL=50
DS110812
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 7

SGA3286Z
SGA3286Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
70 mA
4V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB 14.9 14.6 14.5 13.0
Output Third Order Intercept Point
dBm
25.1 25.5 24.8
Output Power at 1dB Compression
dBm
11.8
12.2
11.3
Input Return Loss
dB
28.6
22.0
18.2
19.2
Output Return Loss
dB 21.4 23.1 24.8 22.7
Reverse Isolation
dB
18.2
18.4
18.6
18.9
Noise Figure
dB 3.7 3.7 3.8
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68, TL=25°C, ZS=ZL=50
2400
MHz
12.2
24.5
10.9
17.8
22.1
19.0
4.0
3500
MHz
10.8
12.3
21.9
19.1
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110812


Features SGA3286ZDC to 5000MHz, Cascadable SiGe H BT MMIC Amplifier SGA3286Z DC to 5000 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington confi guration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increas es breakdown voltage and minimizes leak age current between junctions. Cancella tion of emitter junction non-linearitie s results in higher suppression of inte rmodulation products. At 850MHz and 35m A, the SGA3286Z typically provides +12. 2dBm of 1dB compressed power using a si ngle positive voltage supply. Only two DC-blocking capacitors, a bias resistor , and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® App lied GaAs HBT GaAs MESFET InGaP HBT SiG e BiCMOS Si BiCMOS  SiGe HBT GaAs pH EMT Si CMOS Si BJT GaN HEMT RF MEMS Ga in & Return Loss vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) 20 15 G.
Keywords SGA3286Z, datasheet, pdf, RFMD, CASCADABLE, SiGe, HBT, MMIC, AMPLIFIER, GA3286Z, A3286Z, 3286Z, SGA3286, SGA328, SGA32, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)