SGA2263Z MMIC AMPLIFIER Datasheet

SGA2263Z Datasheet, PDF, Equivalent


Part Number

SGA2263Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA2263Z Datasheet


SGA2263Z
SGA2263ZSGA2263Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA2263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @TL=+25°C
24
0
18
GAIN
12 IRL
6
ORL
0
0123
Frequency (GHz)
4
-10
-20
-30
-40
5
Features
High Gain: 13.8dB at
1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
13
14.7
16.2
dB 850MHz
13.5
dB 1950MHz
13.2
dB 2400MHz
Output Power at 1dB Compression
7.5
dBm
850 MHz
6.1
dBm
1950 MHz
Output Third Intercept Point
20.2
dBm
850 MHz
18.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
17.6 dB 1950MHz
Output Return Loss
25.3
dB 1950MHz
Noise Figure
3.5 dB 1950MHz
Device Operating Voltage
1.9 2.2 2.5 V
Device Operating Current
17 20 23 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
DS140509
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA2263Z
SGA2263Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
40 mA
4V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-55 to +110
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz
Small Signal Gain
dB
14.9 14.7 13.5 13.2
Output Third Order Intercept Point
dBm
20.4
20.2
18.0
16.9
Output Power at 1dB Compression
dBm
7.6 7.5 6.1 5.4
Input Return Loss
dB 21.3 21.5 19.6 17.6 17.2
Output Return Loss
dB 24.1 23.0 27.8 25.3 23.4
Reverse Isolation
dB 17.8 18.5 18.7 19.1 19.2
Noise Figure
dB
3.3 3.2 3.5 4.0
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
3500 MHz
15.0
26.7
19.2
OIP3 vs. Frequency
VD= 2.2 V, ID= 20 mA
30
P1dB vs. Frequency
VD= 2.2 V, ID= 20 mA
10
25
20
15
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
8
6
4
2
TL=+25ºC
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 2.2 V, ID= 20 mA
5
4
3
2
1
TL=+25ºC
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140509


Features SGA2263ZSGA2263Z DC to 5000MHz, CASCADAB LE SiGe HBT MMIC AMPLIFIER Package: SOT -363 Product Description The SGA2263Z is a high performance SiGe HBT MMIC Amp lifier. A Darlington configuration feat uring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current b etween junctions. Cancellation of emitt er junction non-linearities results in higher suppression of intermodulation p roducts. Only two DC-blocking capacitor s, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technol ogy Matching® Applied GaAs HBT GaAs ME SFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT Ga N HEMT RF MEMS Gain & Return Loss vs. Freq. @TL=+25°C 24 0 18 GAIN 12 IRL 6 ORL 0 0123 Frequency (GHz) 4 -10 -2 0 -30 -40 5 Features  High Gain: 13 .8dB at 1950 MHz  Cascadable 50 Operates from Single Supply  Low Thermal Resistance Package Application.
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