MMIC AMPLIFIER. SGA3386Z Datasheet


SGA3386Z AMPLIFIER. Datasheet pdf. Equivalent


SGA3386Z


CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA3386ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier

SGA3386Z

DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

Package: SOT-86

Product Description
The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
 SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS

Gain (dB) Return Loss (dB)

Gain & Return Loss vs. Frequency

20 GAIN

VD= 2.6 V, ID= 35 mA (Typ.)

15

IRL 10
ORL 5

0
012345 Frequency (GHz)

0
-10
-20
-30
-40 6 TL=+25ºC

Features
 High Gain: 15.3dB at 1950 MHz
 Cascadable 50Ω  Operates from Single Supply  Low Thermal Resistance
Package
Applications
 PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite

Parameter

Specification Min. Typ. Max.

Unit

Condition

Small Signal Gain

15.5

17.0

19.0

dB 850MHz

15.3

dB 1950MHz

14.4

dB 2400MHz

Output Power at 1dB Compression

12.3

dBm

850 MHz

10.7

dBm

1950 MHz

Outpu...



SGA3386Z
SGA3386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3386Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
20
GAIN
VD= 2.6 V, ID= 35 mA (Typ.)
15
IRL
10
ORL
5
0
012345
Frequency (GHz)
0
-10
-20
-30
-40
6
TL=+25ºC
Features
High Gain: 15.3dB at
1950 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15.5
17.0
19.0
dB 850MHz
15.3
dB 1950MHz
14.4
dB 2400MHz
Output Power at 1dB Compression
12.3
dBm
850 MHz
10.7
dBm
1950 MHz
Output Third Intercept Point
24.3
dBm
850 MHz
23.8
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >8dB
Input Return Loss
17.0 dB 1950MHz
Output Return Loss
24.2 dB 1950MHz
Noise Figure
3.5 dB 1950MHz
Device Operating Voltage
2.3 2.6 2.9 V
Device Operating Current
31 35 39 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 7

SGA3386Z
SGA3386Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
70 mA
4V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB 18.3 17.9 17.0 15.3
Output Third Order Intercept Point
dBm
25.8
24.3
23.8
Output Power at 1dB Compression
dBm
12.2
12.3
10.7
Input Return Loss
dB 27.1 19.8 15.7 17.0
Output Return Loss
dB
22.7
23.7
25.4
24.2
Reverse Isolation
dB
20.7
20.9
21.0
20.7
Noise Figure
dB 3.1 3.2 3.5
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68Ω, TL=25°C, ZS=ZL=50Ω
2400
MHz
14.4
23.6
9.9
17.4
25.8
20.6
3.8
3500
MHz
12.6
12.5
22.3
19.7
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915




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