SGC4463Z GAIN BLOCK Datasheet

SGC4463Z Datasheet, PDF, Equivalent


Part Number

SGC4463Z

Description

50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGC4463Z Datasheet


SGC4463Z
SGC4463ZSGC4463Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4463Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4463Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 52mA
30
S21
20
10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=12.9dBm at 1950MHz
OIP3=27dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
19.0
20.5
22.0
dB 850MHz
12.9
14.4
15.9
dB 1950MHz
13.3
dB 2400MHz
Output Power at 1dB Compression
13.8
dBm
850 MHz
11.9
12.9
dBm
1950 MHz
12.5
dBm
2400 MHz
Output Third Order Intercept Point
28.0
dBm 850MHz
25.0
27.0
dBm
1950 MHz
26.0
dBm
2400 MHz
Input Return Loss
10.0
13.0
dB 1950MHz
Output Return Loss
7.0 11.0
dB 1950MHz
Noise Figure
3.7 4.7 dB 1930MHz
Thermal Resistance
180
°C/W
junction - lead
Device Operating Voltage
3.0 V
Device Operating Current
46.0
52.0
60.0
mA
Test Conditions: VD=3V, ID=52mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50, Bias Tee Data
DS140210
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGC4463Z
SGC4463Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
Device Voltage (VCE)
RF Input Power* (See Note)
110 mA
4V
12 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit 100 500 850
MHz MHz MHz
Small Signal Gain (G)
dB
23.6
23.0
20.5
Output Third Order Intercept Point (OIP3)
dBm 30.0 29.5
Output Power at 1dB Compression (P1dB)
dBm 16.0 14.4
Input Return Loss (IRL)
dB
25.0
16.0
Output Return Loss (ORL)
dB 24.5 16.0
Reverse Isolation (S12)
dB
25.0
26.0
Noise Figure (NF)
dB 2.8 2.8
Test Conditions: VD=3V ID=52mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50
Typical Performance with Bias Tee, VD=3V, ID=52mA
28.0
13.8
15.0
13.0
25.5
3.1
1950
MHz
14.4
27.0
12.9
13.0
11.0
21.5
3.7
2400
MHz
13.3
26.0
12.9
13.0
10.0
20.5
3.6
3500
MHz
10.4
23.5
10.6
12.0
10.0
19.0
4.4
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
36
21
P1dB vs. Frequency
34 19
32
17
30
28 15
26
25C
24 -40C
22 85C
13 25C
-40C
11 85C
20
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
9
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140210


Features SGC4463ZSGC4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Descri ption RFMD’s SGC4463Z is a high perfo rmance SiGe HBT MMIC amplifier utilizin g a Darlington configuration with a pat ented active bias network. The active b ias network provides stable current ove r temperature and process Beta variatio ns. Designed to run directly from a 3V supply, the SGC4463Z does not require a dropping resistor as compared to typic al Darlington amplifiers. The SGC4463Z is designed for high linearity 3V gain block applications that require small s ize and minimal external components. It is internally matched to 50. Optim um Technology Matching® Applied GaAs H BT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain, RL (dB) Gain & Return Loss VD = 3V, ID = 52mA 30 S21 20 10 0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C -10 S22 -20 S11 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 4 Features  Single Fixed 3.
Keywords SGC4463Z, datasheet, pdf, RFMD, 50MHz, to, 4000MHz, ACTIVE, BIAS, SILICON, GERMANIUM, CASCADABLE, GAIN, BLOCK, GC4463Z, C4463Z, 4463Z, SGC4463, SGC446, SGC44, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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