SGC4563Z GAIN BLOCK Datasheet

SGC4563Z Datasheet, PDF, Equivalent


Part Number

SGC4563Z

Description

50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 10 Pages
Datasheet
Download SGC4563Z Datasheet


SGC4563Z
SGC4563ZSGC4563Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4563Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4563Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
Gain and RL versus Frequency
30
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
20 S21
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S11
-20
-30
-40
0.0 0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
S22
Gain
IRL
ORL
3.0 3.5
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.6dBm at 1950MHz
OIP3=28.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
26.5
dB Freq=500MHz
22.5
25.5
28.5
dB Freq=*850MHz
18.5
20.5
22.5
dB Freq=1950MHz
Output Power at 1dB Compression
16.8
dBm Freq=500MHz
16.5
dBm
Freq = 850 MHz
14.0
15.6
dBm
Freq = 1950 MHz
Output Third Order Intercept Point
29.5
dBm Freq=500MHz
29.5
dBm
Freq = 850 MHz
26.0
28.5
dBm
Freq = 1950 MHz
Input Return Loss
14.0
18.0
dB Freq=1950MHz
Output Return Loss
10.0
14.0
dB Freq=1950MHz
Noise Figure
1.7 3.0 dB Freq=1930MHz
Device Operating Voltage
3V
Device Operating Current
37 48 59 mA
Thermal Resistance
120
°C/W
(RTH, j-l) Junction to lead
Test Conditions: VD=3.0V, ID=48mA, TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit Data
Unless Otherwise Noted
DS140527
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10

SGC4563Z
SGC4563Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ICE)
Max Device Voltage (VCE)
Max RF Input Power* (See Note)
110 mA
4V
12 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-55 to +105
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition 1, ZL=50;
Load condition 2, ZL=10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Source Lead Temperature
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit *100 500 850
MHz MHz MHz
Small Signal Gain (G)
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
dB 27.5 26.5 25.5
dBm 30.5 29.5 29.5
dBm 16.9 16.8 16.5
dB
23.0
18.5
29.5
dB
26.5
19.5
20.5
Reverse Isolation (S12)
Noise Figure (NF)
dB
28.5
29.0
28.5
dB 1.3 1.6 1.7
Test Conditions: VD=3V, ID=48mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm
TL=25°C, ZS=ZL=50, *Bias Tee Data
1950
MHz
20.5
28.5
15.6
18.0
14.0
23.5
1.7
*2500
MHz
18.5
25.5
14.0
14.0
12.0
22.5
1.6
*3500
MHz
15.0
22.5
11.6
17.0
9.5
20.0
2.1
Typical Performance with Bias Tee, VD=3V, ID=48mA
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
32
-40°C
30
25°C
85°C
28
26
24
22
20
18
16
14
12
P1dB versus Frequency
-40°C
25°C
85°C
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140527


Features SGC4563ZSGC4563Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Descri ption RFMD’s SGC4563Z is a high perf ormance SiGe HBT MMIC amplifier utilizi ng a Darlington configuration with a pa tented active bias network. The active bias network provides stable current ov er temperature and process Beta variati ons. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as compared to typi cal Darlington amplifiers. The SGC4563Z is designed for high linearity 3V gain block applications that require small size and minimal external components. I t is internally matched to 50. Opti mum Technology Matching® Applied Gain and RL versus Frequency 30 GaAs HBT G aAs MESFET InGaP HBT SiGe BiCMOS Si BiC MOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dB 20 S21 10 Bia s Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S11 -20 -30 -40 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) S22 Gain IRL ORL 3.0 3.5 Features  Single F.
Keywords SGC4563Z, datasheet, pdf, RFMD, 50MHz, to, 4000MHz, ACTIVE, BIAS, SILICON, GERMANIUM, CASCADABLE, GAIN, BLOCK, GC4563Z, C4563Z, 4563Z, SGC4563, SGC456, SGC45, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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