PFF13N50 N-Channel MOSFET Datasheet

PFF13N50 Datasheet, PDF, Equivalent


Part Number

PFF13N50

Description

500V N-Channel MOSFET

Manufacture

Power Device

Total Page 11 Pages
Datasheet
Download PFF13N50 Datasheet


PFF13N50
Feb 2009
FEATURES
‰ Originative New Design
‰ 100% EAS Test
‰ Rugged Gate Oxide Technology
‰ Extremely Low Intrinsic Capacitances
‰ Remarkable Switching Characteristics
‰ Unequalled Gate Charge : 28 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
‰ Electronic lamp ballasts based on half
bridge topology
‰ PFC (Power Factor Correction)
‰ SMPS (Switched Mode Power Supplies)
PFP13N50/PFF13N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on)typ = 0.46 Ω
ID = 12.5 A
Drain {
Gate
{
◀▲
Source
{
TO-220
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
PFP13N50
PFF13N50
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
12.5 12.5*
7.9 7.9*
50 50*
±30
810
12.5
17
5.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
170 56
1.35 0.45
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
PFP13N50
0.74
0.5
62.5
PFF13N50
2.23
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
Feb 2009
Power Device REV.A1

PFF13N50
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 6.25 A
2.0 -- 4.0
-- 0.46 0.57
V
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
-- -- V
0.5 -- V/℃
-- 10
-- 100
-- 100
-- -100
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1140 1480
-- 155 200
-- 18 25
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 12.5 A,
RG = 25
(Note 4,5)
--
--
--
--
15 30
30 60
70 140
30 60
VDS = 400V, ID = 12.5 A,
-- 28 35 nC
VGS = 10 V
-- 6.5 -- nC
(Note 4,5) -- 12 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 12.5 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
-- 12.5
-- 50
-- 1.5
380 --
3.0 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=12.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD12.5A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
Feb 2009
Power Device REV.A1


Features Feb 2009 PFP13N50/PFF13N50 FEATURES ‰ Originative New Design ‰ 100% EAS Tes t ‰ Rugged Gate Oxide Technology ‰ Ex tremely Low Intrinsic Capacitances ‰ R emarkable Switching Characteristics ‰ Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area ‰ Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPL ICATION ‰ Electronic lamp ballasts bas ed on half bridge topology ‰ PFC (Powe r Factor Correction) ‰ SMPS (Switched Mode Power Supplies) PFP13N50/PFF13N50 500V N-Channel MOSFET BVDSS = 500 V R DS(on)typ = 0.46 Ω ID = 12.5 A Drain { Gate { ● ◀▲ ● ● Source { TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Sou rce Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Par ameter PFP13N50 PFF13N50 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo ltage Drain Current Drain Current Drai n Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Puls ed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (N.
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