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GN2M

EIC discrete Semiconductors
Part Number GN2M
Manufacturer EIC discrete Semiconductors
Description GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
Published Mar 23, 2005
Detailed Description GN2A - GN2M PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability Hi...
Datasheet PDF File GN2M PDF File

GN2M
GN2M


Overview
GN2A - GN2M PRV : 50 - 1000 Volts Io : 2.
0 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMB (DO-214AA) 1.
1 ±0.
3 ± ± 2.
0 ±0.
1 ±0.
15 2.
3 0.
22 ±0.
07 3.
6 ±0.
2 MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.
093 gram Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 50 °C Peak Forward Surge Current 8.
3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 2.
0 Amps.
Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL GN2A VRRM VRMS VDC IF(AV) 50 35 50 GN2B 100 70 100 GN2D 200 140 200 GN2G 400 280 400 2.
0 GN2J 600 420 600 GN2K 800 560 800 GN2M 1000 700 1000 UNIT Volts Volts Volts Amps.
IFSM VF IR IR(H) CJ TJ TSTG 50 1.
0 5.
0 50 75 - 65 to + 150 - 65 to + 150 Amps.
Volts µA µA pF °C °C Typical Junction Capacitance (Note1) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.
0 MHz and applied reverse voltage of 4.
0V DC UPDATE : MAY 27, 1998 RATING AND CHARACTERISTIC CURVES ( GN2A - GN2M ) FIG.
1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.
0 50 FIG.
2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.
6 PEAK FORWARD SURGE CURRENT, AMPERES 40 1.
2 30 0.
8 20 Ta = 50 °C 0.
4 RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 10 8.
3 ms SINGLE HALF SINE WAVE 0 1 2 4 6 10 2...



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