GP800NSS33
GP800NSS33
Single Switch IGBT Module Preliminary Information
Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
3300V 3.6V 800A 1600A
APPLICATIONS
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