Transistor Arrays. CA3018A Datasheet

CA3018A Arrays. Datasheet pdf. Equivalent


Harris CA3018A
Semiconductor
NO
Call
CRoeErnOCetrOBmaSMlaOAiMl:pLEpEcNlTeiDcnEaEtaPtDipoRpRnO@sEDP1hUL-aC8Ar0rTCi0sE-.4cM4o2Em-N7T747
CA3018, CA3018A
January 1999
File Number 338.5
General Purpose Transistor Arrays
[ /Title
()
/Sub-
ject ()
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
[
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
pdf-
mark
The CA3018 and CA3018A consist of four general purpose
silicon NPN transistors on a common monolithic substrate.
Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate
terminal for maximum flexibility.
The transistors of the CA3018 and the CA3018A are well
suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete
transistors in conventional circuits but in addition they
provide the advantages of close electrical and thermal
matching inherent in integrated circuit construction.
The CA3018A is similar to the CA3018 but features tighter
control of current gain, leakage, and offset parameters
making it suitable for more critical applications requiring
premium performance.
Part Number Information
TEMP.
PART NUMBER RANGE (oC)
PACKAGE
PKG.
NO.
CA3018 (obsolete) -55 to 125 12 Pin Metal Can T12.B
CA3018A
-55 to 125 12 Pin Metal Can T12.B
Features
• Matched Monolithic General Purpose Transistors
• hFE Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10%
• VBE Matched
- CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2mV
- CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
• Operation From DC to 120MHz
• Wide Operating Current Range
• CA3018A Performance Characteristics Controlled from
10µA to 10mA
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• Full Military Temperature Range . . . . . . . -55oC to 125oC
Applications
• Two Isolated Transistors and a Darlington Connected
Transistor Pair for Low Power Applications at Frequencies
from DC through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018
Integrated Circuit Transistor Array” for Suggested Applica-
tions
Pinout
CA3018, CA3018A
(METAL CAN)
TOP VIEW
12
1
Q4
11
2 10 SUBSTRATE
3
4 Q2
5
Q3 9
Q1 8
7
6
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright © Harris Corporation 1999


CA3018A Datasheet
Recommendation CA3018A Datasheet
Part CA3018A
Description General Purpose Transistor Arrays
Feature CA3018A; Semiconductor NO Call CRoeErnOCetrOBmaSMlaOAiMl:pLEpEcNlTeiDcnEaEtaPtDipoRpRnO@sEDP1hUL-aC8Ar0rTCi.
Manufacture Harris
Datasheet
Download CA3018A Datasheet




Harris CA3018A
CA3018, CA3018A
Absolute Maximum Ratings
CA3018
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1) . . 20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . 50mA
CA3018A
15V
30V
40V
5V
50mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
Metal Can Package . . . . . . . . . . . . . . . 200
120
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .175oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC
CA3018
CA3018A
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
DC CHARACTERISTICS
Collector Cutoff Current (Figure 1)
Collector Cutoff Current (Figure 2)
ICBO
ICEO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
- 0.002 100
- See 5
Fig. 2
- 0.002 40
- See 0.5
Fig. 2
nA
µA
Collector Cutoff Current Darlington Pair
Collector-to-Emitter Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Forward Current Transfer Ratio (Note 3)
(Figure 3)
Magnitude of Static-Beta Ratio (Isolated
Transistors Q1 and Q2) (Figure 3)
Forward Current Transfer Ratio Darling-
ton Pair (Q3 and Q4) (Figure 4)
Base-to-Emitter Voltage (Figure 5)
Input Offset Voltage (Figures 5, 7)
ICEOD
VCE = 10V, IB = 0
- - - - -5
V(BR)CEO IC = 1mA, IB = 0
15 24 - 15 24 -
V(BR)CBO IC = 10µA, IE = 0
20 60 - 30 60 -
V(BR)EBO IE = 10µA, IC = 0
57 - 57 -
V(BR)CIO IC = 10µA, ICI = 0
20 60 - 40 60 -
VCES
IB = 1mA, IC = 10mA
- 0.23 -
- 0.23 0.5
hFE
VCE = 3V IC = 10mA - 100 -
50 100
-
IC = 1mA
30 100 200 60 100 200
IC = 10µA - 54 - 30 54 -
VCE = 3V,
IC1 = IC2 = 1mA
0.9 0.97
-
0.9 0.97
-
hFED
VCE = 3V IC = 1mA 1500 5400 - 2000 5400 -
IC = 100µA - - - 1000 2800 -
VBE
VCE = 3V IE = 1mA
- 0.715 - 0.600 0.715 0.800
IE = 10mA
- 0.800 -
- 0.800 0.900
VBE1
VBE2
VCE = 3V, IE = 1mA
- 0.48 5
- 0.48 2
µA
V
V
V
V
V
-
-
-
-
-
-
V
V
mV
Temperature Coefficient: Base-to-Emitter
Voltage Q1, Q2 (Figure 6)
------V----TB----E----
VCE = 3V, IE = 1mA
- -1.9 -
- -1.9 - mV/oC
2



Harris CA3018A
CA3018, CA3018A
Electrical Specifications TA = 25oC (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Base (Q3)-to-Emitter (Q4) Voltage Dar-
lington Pair (Figure 8)
Temperature Coefficient: Base-to-Emitter
Voltage Darlington Pair (Q3 and Q4)
(Figure 9)
VBED (V9-1) VCE = 3V IE = 10mA
IE = 1mA
------V----B--T--E---D----
VCE = 3V, IE = 1mA
Temperature Coefficient: Magnitude
of Input Offset Voltage
DYNAMIC CHARACTERISTICS
--V----B----E---1-----–-T---V----B----E---2---
VCC = 6V, VEE = -6V,
IC1 = IC2 = 1mA
Low Frequency Noise Figure
(Figures 10 - 12)
NF f = 1kHz, VCE = 3V,
IC = 100µA, Source
Resistance = 1k
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio
(Figure 13)
Short Circuit Input Impedance
(Figure 13)
Open Circuit Output Impedance
(Figure 13)
Open Circuit Reverse Voltage
Transfer Ratio (Figure 13)
Admittance Characteristics
Forward Transfer Admittance
(Figure 14)
Input Admittance (Figure 15)
hFE
hIE
hOE
hRE
YFE
YIE
Output Admittance (Figure 16)
YOE
Reverse Transfer Admittance
(Figure 17)
YRE
Gain Bandwidth Product (Figure 18)
fT
Emitter-to-Base Capacitance
CEB
Collector-to-Base Capacitance
CCB
Collector-to-Substrate Capacitance
CCI
NOTE:
3. Actual forcing current is via the emitter for this test.
f = 1kHz, VCE = 3V,
IC = 1mA
f = 1kHz, VCE = 3V,
IC = 1mA
f = 1kHz, VCE = 3V,
IC = 1mA
f = 1kHz, VCE = 3V,
IC = 1mA
f = 1MHz, VCE = 3V,
IC = 1mA
f = 1MHz, VCE = 3V,
IC = 1mA
f = 1MHz, VCE = 3V,
IC = 1mA
f = 1MHz, VCE = 3V,
IC = 1mA
VCE = 3V, IC = 3mA
VEB = 3V, IE = 0
VCB = 3V, IC = 0
VCI = 3V, IC = 0
CA3018
CA3018A
MIN TYP MAX MIN TYP MAX UNITS
- 1.46 -
- 1.46 1.60 V
- 1.32 - 1.10 1.32 1.50 V
- 4.4 -
- 4.4 - mV/oC
- 10 -
- 10 - µV/oC
- 3.25 -
- 3.25 -
dB
- 110 -
- 3.5 -
- 15.6 -
- 1.8 x -
10-4
- 110 -
- 3.5 -
- 15.6 -
- 1.8 x -
10-4
-
k
µS
-
- 31 - -
j1.5
- 31 - -
j1.5
- 0.3 + -
j0.04
- 0.3 + -
j0.04
- 0.001 -
+ j0.03
- 0.001 -
+ j0.03
See Figure 17
mS
mS
mS
mS
300 500 - 300 500 - MHz
- 0.6 -
- 0.6 -
pF
- 0.58 -
- 0.58 -
pF
- 2.8 -
- 2.8 -
pF
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)