Transistors. 2SC1008 Datasheet

2SC1008 Transistors. Datasheet pdf. Equivalent

2SC1008 Datasheet
Recommendation 2SC1008 Datasheet
Part 2SC1008
Description Transistors
Feature 2SC1008; TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR (NPN) FEATURES z .
Manufacture TGS
Datasheet
Download 2SC1008 Datasheet




TGS 2SC1008
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
8
700
800
156
150
-55~+150
Unit
V
V
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE (sat)
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.01mA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=2V, IC=50mA
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCB=10V,IC=0, f=1MHz
VCE=10V,IC= 50mA
Min Typ Max Unit
80 V
60 V
8V
0.1 μA
0.1 μA
40 400
0.4 V
1.1 V
8 pF
30 MHz
CLASSIFICATION OF hFE
RANK
R
RANGE
40-80
O
70-140
Y
120-240
G
200-400
B,Aug,2014



TGS 2SC1008
Typical Characterisitics
0.25
COMMON
EMITTER
Ta=25
0.20
Static Characteristic
1mA
900uA
800uA
700uA
0.15
600uA
500uA
0.10 400uA
300uA
0.05 200uA
IB=100uA
0.00
0
12345678
COLLECTOR-EMITTER VOLTAGE VCE (V)
9
10
1000
V —— I
CEsat
C
100 Ta=100
Ta=25
10
0.1
1 10 100
COLLECTOR CURRENT IC (mA)
700
COMMON EMITTER
VCE=2V
I
C
—— V
BE
100
β=10
700
10
1
1000
100
10
0.1
1000
800
600
400
200
0
0.1
1000
100
10
0.1
200
1200
1000
800
600
400
200
0
0
400 600 800
BASE-EMMITER VOLTAGE VBE (mV)
P —— T
Ca
1000
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
1
0.1
2SC1008
h ——
FE
I
C
Ta=100
Ta=25
1 10
COLLECTOR CURRENT
COMMON EMITTER
VCE=2V
100 700
IC (mA)
V
BEsat
——
I
C
Ta=25
Ta=100
1 10 100
COLLECTOR CURRENT IC (mA)
β=10
700
C /C
ob ib
——
V /V
CB EB
Cib
f=1MHz
IE=0/IC=0
Ta=25
Cob
1
REVERSE VOLTAGE V (V)
10
30
B,Aug,2014







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