2SA1209. A1209 Datasheet

A1209 2SA1209. Datasheet pdf. Equivalent

A1209 Datasheet
Recommendation A1209 Datasheet
Part A1209
Description 2SA1209
Feature A1209; Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA Hig.
Manufacture Sanyo Semicon Device
Datasheet
Download A1209 Datasheet




Sanyo Semicon Device A1209
Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)180
(–)160
(–)5
(–)140
(–)200
1
10
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
min
100*
Ratings
typ
max
Unit
(–)0.1 µA
(–)0.1 µA
400*
150 MHz
(4.0)3.0
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5



Sanyo Semicon Device A1209
2SA1209/2SC2911
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Test Circuit
IB1
IN 3kIB2
RB
5k
50
+
1µF
Symbol
Conditions
VCE(sat)
ton
tf
tstg
IC=(–)50mA, IB=(–)5mA
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
OUT
2k
+
1µF
--2V 20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
Ratings
min typ max
Unit
0.07 0.3
(–0.14) (–0.4)
V
0.1 µs
0.1 µs
1.5 µs
IC -- VCE
--140
2SA1209
--120 --0.6mA --0.5mA
--100
--80
--0.4mA
--0.3mA
--60 --0.2mA
--40
--20
00
--140
--120
--0.1mA
IB=0
--10 --20 --30 --40 --50 --60 --70
Collector-to-Emitter Voltage, VCE – V ITR03021
IC -- VBE
2SA1209
--100
--80
--60
--40
--20
00 --0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE – V ITR03023
IC -- VCE
140
120 0.5mA
2SC2911
0.4mA
100
0.3mA
80
60 0.2mA
40
0.1mA
20
IB=0
00 10 20 30 40 50 60 70
Collector-to-Emitter Voltage, VCE – V ITR03022
IC -- VBE
140
2SC2911
120
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR03024
No.779-2/5



Sanyo Semicon Device A1209
2SA1209/2SC2911
hFE -- IC
hFE -- IC
1000
1000
7
2SA1209
7
2SC2911
VCE=--5V
VCE=5V
55
33
22
100
7
5
3
2
100
7
5
3
2
10
5 7 --1.0
3
2
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03025
fT -- IC
2SA1209
VCE=--10V
10
5 7 1.0
2 3 5 7 10
23 5
Collector Current, IC – mA
3
2SC2911
fT -- IC
2 VCE=10V
7 100 2
ITR03026
100
7
5
3
2
100
7
5
3
2
10
--1.0
100
7
5
3
2
2 3 5 7 --10
23
5 7 --100
2
Collector Current, IC – mA
ITR03027
Cob -- VCB
2SA1209
f=1MHz
10
7
5
3
2
1.0
--1.0
2
--1.0
7
5
3
2
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03029
VCE(sat) -- IC
2SA1209
IC / IB=10
--0.1
7
5
3
2
5 7 --1.0
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03031
10
1.0
100
7
5
3
2
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
ITR03028
Cob -- VCB
2SC2911
f=1MHz
10
7
5
3
2
1.0
1.0
1.0
7
5
3
2
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR03030
VCE(sat) -- IC
2SC2911
IC / IB=10
0.1
7
5
3
2
5 7 1.0
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
ITR03032
No.779-3/5







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