D-S MOSFET. SI9942DY Datasheet

SI9942DY MOSFET. Datasheet pdf. Equivalent

SI9942DY Datasheet
Recommendation SI9942DY Datasheet
Part SI9942DY
Description Complimentary 20-V (D-S) MOSFET
Feature SI9942DY; Si9942DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P.
Manufacture Vishay
Datasheet
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Vishay SI9942DY
Si9942DY
Vishay Siliconix
Complimentary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.125 @ VGS = 10 V
0.250 @ VGS = 4.5 V
0.200 @ VGS = –10 V
0.350 @ VGS = –4.5 V
ID (A)
"3.0
"2.0
"2.5
"2.0
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"20
"20
"3.0
"2.5
"2.5
"2.0
"10
"10
1.6 –1.6
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
N- or P-Channel
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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Vishay SI9942DY
Si9942DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS = –16 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS v –5 V, VGS = –10 V
VDS w 5 V, VGS = 4.5 V
VDS v –5 V, VGS = –4.5 V
VGS = 10 V, ID = 1.0 A
VGS = –10 V, ID = 1.0 A
VGS = 4.5 V, ID = 0.5 A
VGS = –4.5 V, ID = 0.5 A
VDS = 15 V, ID = 3.0 A
VDS = –15 V, ID = –3.0 A
IS = 1.25 A, VGS = 0 V
IS = –1.25 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 10 V, ID = 2.3 A
Qgs
P-Channel
VDS = –10 V, VGS = –10 V, ID = –2.3 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 20 V, RL = 20 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = –20 V, RL = 20 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 1.25 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
–1.0
10
–10
2
–2
"100
2
–2
25
–25
0.07
0.12
0.105
0.22
4.8
3.0
0.75
–0.8
0.125
0.200
0.250
0.350
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7 25
6.7 25
0.75
nC
1.3
1.7
1.6
6 15
10 40
10 20
12 40
17 50
ns
20 90
10 50
10 50
45 100
70 100
www.vishay.com S FaxBack 408-970-5600
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Document Number: 70130
S-000652—Rev. L, 27-Mar-00



Vishay SI9942DY
Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10 thru 4 V
8
10
8
66
NĆCHANNEL
Transfer Characteristics
TC = –55_C
125_C
4 3V
2
0
0
0.20
2V
2468
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
0.16
0.12
0.08
VGS = 4.5 V
VGS = 10 V
0.04
0
02468
ID – Drain Current (A)
Gate Charge
10
8
VDS = 10 V
ID = 2.3 A
6
10
4
2 25_C
0
0
600
1234
VGS – Gate-to-Source Voltage (V)
Capacitance
5
500
400
300
200
100
0
0
Ciss
Crss
Coss
4 8 12 16
VDS – Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
2.0
1.6
VGS = 10 V
ID = 2 A
1.2
4 0.8
2 0.4
0
0246
Qg – Total Gate Charge (nC)
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
8
0
–50
0 50 100
TJ – Junction Temperature (_C)
150
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