Photodiode. AD100-8 Datasheet

AD100-8 Photodiode. Datasheet pdf. Equivalent

AD100-8 Datasheet
Recommendation AD100-8 Datasheet
Part AD100-8
Description Photodiode
Feature AD100-8; AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise.
Manufacture HY-LINE
Datasheet
Download AD100-8 Datasheet




HY-LINE AD100-8
AD100-8 TO52S1
Avalanche Photodiode
Special characteristics:
high gain at low bias voltage
fast rise time
100 µm diameter active area
low capacitance
Parameters: (at 20 ±2°C)
Active Area
Dark Current 1)
(M=100)
Total Capacitance 1)
(M=100)
Breakdown Voltage UBR
(at ID=2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 800 nm, at M=100)
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
Noise Current
(M=100)
N.E.P.
(M=100, 800 nm)
Operating Temperature
Storage Temperature
0.00785 mm2
100 µm
max. 0.1 nA
typ. 50 pA
typ. 0.8 pF
120 - 190 V
0.35 … 0.55 V/K
typ. 0.45 V/K
min. 45 A/W
typ. 50 A/W
> 2 GHz
< 180 ps
50 - 60
> 200
typ. 2.2
typ. 0.2
typ. 0.15 pA/Hz½
typ. 3 * 10-15 W/Hz½
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 50 pA at M = 1 and irradiation by a LED
(680 nm, 60 nm bandwith).
Increase the photo current up to 5.0 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
Package (TO52S1):
CASE
ANODE
4
31
45°
2.54
5.4 ± 0.2
4.7 ± 0.1
2.5 ± 0.1
2.0 min.
CATHODE
0.45
Chip: AD100-8
diam. active area: 100 µm
1
3
4
view without
window cap
www.silicon-sensor.com
Version: 04-10-26
Specification before: SSO-AD-100-8-TO52-S1
www.pacific-sensor.com



HY-LINE AD100-8
0 ,6 0 0
0 ,5 0 0
0 ,4 0 0
0 ,3 0 0
0 ,2 0 0
0 ,1 0 0
0 ,0 0 0
400
Spectral Responsivity at M=1
series - 8
500
600
700
800
W a v e le n g th (n m )
900
1000 1100
60
50
40
30
20
10
0
400
Spectral Responsivity at M=100
series - 8
500 600 700 800 900 1000 1100
Wavelength (nm)
1,00
0,90
0,80
0,70
0,60
0,50
0,40
0,30
0,20
0,10
0,00
400
quantum efficiency for M=1
series - 8
480 560 640 720 800 880 960 1040
wavelength (nm)
Bias supply voltage
Maximum Ratings:
ƒ max. electrical power dissipation
ƒ max. optical peak value, once
ƒ max. continous optical operation
ƒ ( Pelectr. = Popt. * Sabs * M * UR )
100 mW at 22°C
200 mW for 1 s
IPh (DC) 250 µA
1 mA for signal 50 µs "on" / 1 ms "off"
Application Hints:
ƒ Current should be limited by a protecting resistor or current limiting - IC inside the
power supply.
ƒ Use of low noise read-out - IC.
ƒ For high gain applications bias voltage should be temperature compensated.
ƒ For low light level applications, blocking of ambient light should be used.
Current limiting resistor
APD
min. 0,1 µF,
closest to APD
Diode, protective circuit
Read-out circuit or
e.g. 50Load resistance
Handling Precautions:
ƒ Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
ƒ min. Pin - length
2 mm
ƒ ESD - protection
Standard precautionary measures are sufficient.
ƒ Storage
Store devices in conductive foam.
ƒ Avoid skin contact with window!
ƒ Clean window with Ethyl alcohol if necessary.
ƒ Do not scratch or abrade window.
Ostendstr. 1
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax: +49 (0)30-63 99 23 33
E-Mail: sales@silicon-sensor.de
U.K. Office
5700 Corsa Avenue #105
35 Orchard Close
Westlake Village
Stanstead Abbotts, Ware Deutschland: CA 91362SUcShAweiz:
Hertfordshire SG 12 8 AH InselkammerstraßPeh1o0ne: +1G-8r1ü8nd-7e0n6st-r3a4ß0e082
PEh-Monaeil:/Fpa.nxa: s+h4@4 s(0ili)c1o9n2-0s/e8n7DTEseo2--M8lr0:.20ac908iol00:9m8p6oU1wn4ete5r@r0h3ah-cy1FEh-0la-iinnMxge:a.dile: s+a1lCTEe-e8-HsMl1.@-:88a02i-pl58:4a2p78co96Fiwf4-liu7c7er-0rls4i@5ne2g3nh0esyn0-olirn.ceo.cmh
URL: www.hy-line.de
URL: www.hy-line.ch







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