Silicon MOSFET. 2SK2617LS Datasheet

2SK2617LS MOSFET. Datasheet pdf. Equivalent

2SK2617LS Datasheet
Recommendation 2SK2617LS Datasheet
Part 2SK2617LS
Description N-Channl Silicon MOSFET
Feature 2SK2617LS; Ordering number : ENN5443A Features • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSF.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK2617LS Datasheet




Sanyo Semicon Device 2SK2617LS
Ordering number : ENN5443A
Features
Low ON-resistance.
Low Qg.
2SK2617LS
N-Channl Silicon MOSFET
2SK2617LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2078C
[2SK2617LS]
10.0 3.2
4.5
2.8
0.9 1.2
1.2
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123
2.55 2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Tc=25˚C
Conditions
Ratings
500
±30
4
16
2.0
25
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : K2617
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=500V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
min
500
3.5
1.1
Ratings
typ
max
Unit
V
1.0 mA
±100 nA
5.5 V
2.2 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100437 No.5443-1/4



Sanyo Semicon Device 2SK2617LS
2SK2617LS
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
Conditions
ID=2A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, ID=4A, VGS=10V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=4A, VGS=0
Switching Time Test Circuit
VDD=200V
VGS=15V
PW=1µs
D.C.0.5%
G
ID=2A
RL=100
D VOUT
P.G
RGS
50
2SK2617LS
S
Ratings
min typ max
Unit
1.2 1.6
550 pF
190 pF
95 pF
15 nC
15 ns
15 ns
45 ns
25 ns
0.95
1.2 V
ID -- VDS
7
Tc=25°C
6 10V 15V
5
8V
4
3
2 7V
1
VGS=6V
0
0 2 4 6 8 1.0
Drain-to-Source Voltage, VDS -- V IT05191
RDS(on) -- VGS
4.0
Tc=25°C
3.5
3.0
2.5
2.0
2A
1.5 ID=4A
1.0 1A
0.5
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT05193
8
VDS=10V
7
ID -- VGS
Tc= --25°C
6 25°C
5
75°C
4
3
2
1
0
0
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1.0
0.7
0.4
0.1
--50
5 10 15
Drain-to-Source Voltage, VDS -- V
RDS(on) -- Tc
20
IT05192
I D=I2DA=,2VAG, VS=G1S0=V15V
--25 0
25 50 75 100 125
Case Temperature, Tc -- °C
IT05194
No.5443-2/4



Sanyo Semicon Device 2SK2617LS
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
100
7
5
3
2
10
7
7
2.5
2SK2617LS
yfs-- ID
VDS=10V
25°C
Tc=
--25°C
75°C
23
5 7 1.0
23
Drain Current, ID -- A
SW Time -- ID
5 7 10
IT05195
VDD=200V
VGS=15V
td(off)
tf
tr
td(on)
1.0 2 3
Drain Current, ID -- A
PD -- Ta
57
IT05197
IF -- VSD
100
7
5
VGS=0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT05196
ASO
3
2 IDP=16A
<1µs
10
7
5
ID=4A
100µs10µs
3
2
1.0
7
5
3
Operation in
is limited by
this area
RDS(on).
DC
op1e0ra01tmi0omsn1sms
2
0.1
7
5
3
2 Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10 2 3 5 7 100 2
Drain-to-Source Voltage, VDS -- V
PD -- Tc
35
3 57
IT05198
30
2.0
25
1.5
20
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05199
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT05120
No.5443-3/4







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