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Part Number IXTQ280N055T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTQ280N055T DatasheetIXTQ280N055T Datasheet (PDF)

  IXTQ280N055T   IXTQ280N055T
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH280N055T IXTQ280N055T VDSS = ID25 = RDS(on) ≤ 55V 280A 3.2mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-3P) TO-247 TO-3P Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved Maximum Ratings 55 55 V V ± 20 V 280 A 75 A 600 A 40 A 1.5 J 550 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.5 g Characteristic Values Min. Typ. Max. 55 V 2.0 4.



IXTH280N055T IXTQ280N055T IXTV280N055T


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