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Part Number IXTV230N085T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTV230N085T DatasheetIXTV230N085T Datasheet (PDF)

  IXTV230N085T   IXTV230N085T
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 85 V 85 V PLUS220 (IXTV) ± 20 230 75 520 V A G DS A PLUS220SMD (IXTV_S) A D (TAB) 40 A 1.0 J 3 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...15 3 V/ns W °C °C °C °C °C N/lb. g G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect.



IXTQ230N085T IXTV230N085T IXTV230N085TS


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