Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV230N085T IXTV230N085TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 230 4.4
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220)
Maximum Ratings
85 V 85 V
PLUS220 (IXTV)
± 20
230 75
520
V A
G DS
A PLUS220SMD (IXTV_S) A
D (TAB)
40 A 1.0 J
3
550 -55 ... +175
175 -55 ... +175
300 260 11...65 /2.5...15
3
V/ns
W °C °C °C
°C °C N/lb.
g
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect.