DatasheetsPDF.com
IXTP180N10T
Power MOSFET
Description
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width ...
IXYS Corporation
Download IXTP180N10T Datasheet
Similar Datasheet
IXTP180N10T
Power MOSFET
- IXYS Corporation
IXTP180N10T
N-Channel MOSFET
- INCHANGE
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)