40MT120UH IGBT Datasheet

40MT120UH Datasheet, PDF, Equivalent


Part Number

40MT120UH

Description

UltraFast NPT IGBT

Manufacture

International Rectifier

Total Page 13 Pages
Datasheet
Download 40MT120UH Datasheet


40MT120UH
I27126 rev. C 02/03
"HALF-BRIDGE" IGBT MTP
40MT120UH
UltraFast NPT IGBT
Features
UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode VF
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (file E78996)
Benefits
Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
VCES = 1200V
IC = 80A
TC = 25°C
MMTP
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
@ TC = 25°C
@ TC = 105°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
Max
1200
80
40
160
160
21
160
± 20
2500
463
185
Units
V
A
V
W
www.irf.com
1

40MT120UH
40MT120UH
I27126 rev. C 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
V(BR)CES/ Temperature Coeff. of
TJ Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
VGE(th)/ Temperature Coeff. of
TJ Threshold Voltage
gfe Transconductance
ICES
Zero Gate Voltage Collector Current
4
IGES
Gate-to-Emitter Leakage Current
+1.1
3.36
4.53
3.88
5.35
-12
35
0.4
0.2
V VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 3mA (25-125°C)
3.59 V VGE = 15V, IC = 40A
4.91
VGE = 15V, IC = 80A
4.10
VGE = 15V, IC = 40A TJ = 150°C
5.68
VGE = 15V, IC = 80A TJ = 150°C
6 V VCE = VGE, IC = 500µA
mV/°C VCE = VGE, IC = 1mA (25-125°C)
S VCE = 50V, IC = 40A, PW = 80µs
250 µA VGE = 0V, VCE = 1200V, TJ = 25°C
1.0 mA VGE = 0V, VCE = 1200V, TJ = 125°C
10 VGE = 0V, VCE = 1200V, TJ = 150°C
±250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on)
Qge Gate-Emitter Charge (turn-on)
Qgc Gate-Collector Charge (turn-on)
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
Cies
Coes
Cres
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area
399
43
187
1142
1345
2487
599
65
281
1713
2018
3731
1598
1618
3216
2397
2427
4824
5521 8282
380 570
171 257
full square
10
nC IC = 40A
VCC = 600V
VGE = 15V
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5, L = 200µH
TJ = 25°C, Energy losses include tail
and diode reverse recovery
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5, L = 200µH
TJ = 125°C, Energy losses include tail
and diode reverse recovery
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
TJ = 150°C, IC = 160A
VCC = 1000V, Vp = 1200V
Rg = 5, VGE = +15V to 0V
µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5, VGE = +15V to 0V
2 www.irf.com


Features I27126 rev. C 02/03 "HALF-BRIDGE" IGBT MTP 40MT120UH UltraFast NPT IGBT Feat ures • UltraFast Non Punch Through (N PT) Technology • Positive VCE(ON)Temp erature Coefficient • 10µs Short Cir cuit Capability • HEXFRED TM Antipara llel Diodes with UltraSoft Reverse Reco very • Low Diode VF • Square RBSOA • Aluminum Nitride DBC • Optional S MT Thermistor (NTC) • Very Low Stray Inductance Design for High Speed Operat ion • UL approved (file E78996) Benef its • Optimized for Welding, UPS and SMPS Applications • Rugged with Ultra Fast Performance • Benchmark Efficien cy above 20KHz • Outstanding ZVS and Hard Switching Operation • Low EMI, r equires Less Snubbing • Excellent Cur rent Sharing in Parallel Operation • Direct Mounting to Heatsink • PCB Sol derable Terminals VCES = 1200V IC = 80 A TC = 25°C MMTP Absolute Maximum Rat ings Parameters VCES IC I CM I LM IF I FM VGE VISOL PD Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Curre.
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