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RLT808500G

Roithner
Part Number RLT808500G
Manufacturer Roithner
Description High Power Infrared Laser Diode
Published Mar 4, 2015
Detailed Description RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing ...
Datasheet PDF File RLT808500G PDF File

RLT808500G
RLT808500G

Overview
RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ.
Output power: 500 mW, cw NOTE! Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature Po VR(LD) VR(PD) TC TSTG RATING 550 2 30 -10 .
.
+40 -40 .
.
+80 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Optical Output Power Threshold...


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