Silicon Rectifier. 10A6 Datasheet

10A6 Rectifier. Datasheet pdf. Equivalent

Part 10A6
Description Silicon Rectifier
Feature Naina Semiconductor Ltd. Silicon Rectifier, 10.0A Features • Diffused junction • Low cost • Low reve.
Manufacture Naina Semiconductor
Datasheet
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10A6
Naina Semiconductor Ltd.
Silicon Rectifier, 10.0A
Features
Diffused junction
Low cost
Low reverse leakage current
High current capability & low forward voltage drop
Plastic material carrying UL recognition 94V-0
Polarity: Color Band denotes Cathode
Lead free finish
10A05 - 10A10
Thermal and Mechanical Specifications (TA = 250C unless otherwise
specified)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
TJ
- 55 to +
125
0C
Maximum storage temperature
range
TStg
- 55 to +
150
0C
Typical thermal resistance junction
to ambient
RθJA
10 0C/W
Approximate weight
W 2.1 g
JEDEC R-6
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol 10A05 10A1
Maximum repetitive peak reverse
voltage
VRRM
50 100
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
current @ TA = 500C
Peak forward surge current (8.3ms)
single half sine-wave superimposed
on rated load
VRMS
VDC
IF(AV)
IFSM
35 70
50 100
Maximum DC forward voltage drop
per element @ 10 A
VF
Typical junction capacitance
CJ
Maximum DC reverse
current at rated DC
blocking voltage
TA = 250C
TA = 1000C
IR
10A2
200
140
200
10A4
400
280
400
10
600
1.0
150
10
100
10A6
600
420
600
10A8
800
560
800
10A10
1000
700
1000
Units
V
V
V
A
A
V
pF
µA
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com



10A6
Naina Semiconductor Ltd.
10A05 - 10A10
Dimensions in inches and (millimeters)
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com





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