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TPN4R303NL

Toshiba

Silicon N-channel MOSFET


Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN4R303NL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement...



Toshiba

TPN4R303NL

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