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P7NA60FI

STMicroelectronics
Part Number P7NA60FI
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Mar 18, 2015
Detailed Description STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V...
Datasheet PDF File P7NA60FI PDF File

P7NA60FI
P7NA60FI

Overview
STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.
2 A 4.
4 A s TYPICAL RDS(on) = 0.
92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain-gate Voltage (RG S = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Val ue STP7NA60 STP7NA60FI 600 600 ± 30 7.
2 4.
4 4.
6 2.
8 29 29 125 45 1 0.
36  2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 STP7NA60/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 2.
78 6 2.
5 0.
5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol IA R EAS EAR IA R Pa ra met er Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Ava...


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