PowerTrench MOSFET. FDMS7602S Datasheet

FDMS7602S Datasheet PDF, Equivalent


Part Number

FDMS7602S

Description

Dual N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 12 Pages
PDF Download
Download FDMS7602S Datasheet PDF


FDMS7602S Datasheet
May 2014
FDMS7602S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
„ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
„ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 14 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
S2
S2 S2
G2
S1/D2
D1
D1
D1
D1 G1
Top Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
S2 5
S2 6
S2 7
G2 8
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Thermal Characteristics
Q2 4 D1
3 D1
2 D1
Q1 1 G1
Q1 Q2
30 30
±20 ±20
30
121a
30
171b
40
2.21a
1.01c
60
2.51b
1.01d
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.5
501b
1201d
2
°C/W
Device Marking
FDMS7602S
Device
FDMS7602S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C2
1
www.fairchildsemi.com

FDMS7602S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1 30
Q2 30
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 1 mA, referenced to 25 °C
Q1
Q2
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Q1
Q2
Gate to Source Leakage Current
VGS = 20 V, VDS= 0 V
VGS = 20 V, VDS= 0 V
Q1
Q2
V
15
15
mV/°C
1 μA
500 μA
100 nA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
ID = 250 μA, referenced to 25 °C
ID = 1 mA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A , TJ = 125 °C
VGS = 10 V, ID = 17 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 17 A , TJ = 125 °C
VDS = 5 V, ID = 12 A
VDS = 5 V, ID = 17 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1
1
1.8 3
1.8 3
V
-6
-5
mV/°C
6.0 7.5
8.5 12
8.3 12
mΩ
4.2 5.0
5.4 6.8
4.9 7.2
63
87
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Q1:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1315
2020
445
860
45
95
0.9
0.7
1750
2690
600
1145
70
145
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
Q1:
VDD = 15 V, ID = 12 A, RGEN = 6 Ω
Q2:
VDD = 15 V, ID = 17 A, RGEN = 6 Ω
VGS = 0 V to 10 V Q1
VDD = 15 V,
VGS = 0 V to 4.5 V ID = 12 A
Q2
VDD = 15 V,
ID = 17 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8.6
11
18
20
ns
2.5
3.8
10
10
ns
20
27
32
43
ns
2.3
3.2
10
10
ns
20
33
28
46
nC
9.3
16
13
22
nC
4.3
5.8
nC
2.2
4.6
nC
©2010 Fairchild Semiconductor Corporation
FDMS7602S Rev.C2
www.fairchildsemi.com


Features Datasheet pdf FDMS7602S Dual N-Channel PowerTrench® M OSFET May 2014 FDMS7602S Dual N-Chann el PowerTrench® MOSFET Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ Featu res General Description Q1: N-Channel „ Max rDS(on) = 7.5 mΩ at VGS = 10 V , ID = 12 A „ Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, I D = 17 A „ Max rDS(on) = 6.8 mΩ at VG S = 4.5 V, ID = 14 A „ RoHS Compliant This device includes two specialized N -Channel MOSFETs in a dual MLP package. The switch node has been internally con nected to enable easy placement and rou ting of synchronous buck converters. Th e control MOSFET (Q1) and synchronous S yncFETTM (Q2) have been designed to pro vide optimal power efficiency. Applicat ions „ Computing „ Communications General Purpose Point of Load „ Not ebook VCORE S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 Top Bottom Power 56 MOSFET Maxim um Ratings TA = 25 °C unless otherwise noted S2 5 S2 6 S2 7 G2 8 Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to So.
Keywords FDMS7602S, datasheet, pdf, Fairchild Semiconductor, Dual, N-Channel, PowerTrench, MOSFET, DMS7602S, MS7602S, S7602S, FDMS7602, FDMS760, FDMS76, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)