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FSU04N60A

IPS
Part Number FSU04N60A
Manufacturer IPS
Description N-Channel MOSFET
Published Mar 25, 2015
Detailed Description FSU04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Suppl...
Datasheet PDF File FSU04N60A PDF File

FSU04N60A
FSU04N60A

Overview
FSU04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • ESD improved Capability Ordering Information PART NUMBER FSU04N60A PACKAGE TO-251 BRAND FSU04N60A VDSS 600 V RDS(ON) (Typ.
) 1.
9 : G D S TO-251 Not to Scale ID 4A Absolute Maximum Ratings TC=25 oC unless otherwise specified Symbol Parameter FSU04N60A Units VDSS ID ID@ 100 oC IDM PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC (NOTE *1) (NOTE *2) 600 4* 2.
9 16 86 0.
69 V A W W/oC VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Engergy L=10 mH ± 20 300 V mJ IAS dv/dt Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *3) Figure 16 5.
0 A V/ ns VESD(G-S) Gate to Source ESD (HBM-C=100pF, R=1.
5K: 3000 V TL TPKG Maximum Temperature for Soldering Leads at 0.
063 in (1.
6 mm) from Case for 10 seconds Package Body for 10 seconds 300 260 oC TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance Symbol Parameter RTJC RTJA Junction-to-Case Junction-to-Ambient FSU04N60A 1.
45 62.
5 Units Te s t C o n d i t i ons oC/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2009 InPower Semiconductor Co.
, Ltd.
Page 1 of 9 FSA04N60A REV.
A.
Aug.
2009 OFF Characteristics TJ=25 oC unless otherwise specified Symbol Parameter Min.
Typ.
BVDSS Drain-to-Source Breakdown Voltage BreakdownVoltage Temperature 'BVDSS/' TJ Coefficient, Figure 11.
600 --- 0.
67 Max.
-- -- -- -- 25 IDSS Drain-to-Source Leakage Current -- ...


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