CONTROL THYRISTOR. Y35KPC Datasheet

Y35KPC Datasheet PDF, Equivalent


Part Number

Y35KPC

Description

PHASE CONTROL THYRISTOR

Manufacture

TECHSEM

Total Page 3 Pages
PDF Download
Download Y35KPC Datasheet PDF


Y35KPC Datasheet
Features
n Center amplifying gate
n Metal case with ceramic insulator
n Low on-state and switching losses
Typical Applications
n AC controllers
n DC and AC motor control
n Controlled rectifiers
Y35KPC
PHASE CONTROL THYRISTOR
IT(AV)
VDRM/VRRM
ITSM
I2t
1076A
400~1000V
11 KA
605 103A2S
SYMBOL
CHARACTERISTIC
IT(AV)
Mean on-state current
TEST CONDITIONS
Tj(°C)
Min
VALUE
Type Max
180° half sine wave 50Hz
Double side cooled,
Ths=55°C
Ths=102°C
125
1076
500
UNIT
A
VDRM
VRRM
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
dv/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
Repetitive peak current
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
VDM= VDRM
VRM= VRRM
10ms half sine wave
VR=0.6VRRM
ITM=1500A, F=15KN
Critical rate of rise of off-state voltage VDM=0.67VDRM
125 400
125
125
125
125
125
1000
V
40 mA
11.0
605
0.80
0.40
1.80
KA
A2s*103
V
m
V
1000
V/μs
di/dt
Irm
trr
Qrr
IGT
VGT
IH
VGD
Rth(j-h)
Fm
Tstg
Wt
Outline
Critical rate of rise of on-state current
VDM= 67%VDRM to 1300A,
Gate pulse tr 0.5μs IGM=1.5A
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
ITM=700A,tp=1000µs, di/dt=-20A/µs,
VR =50V
VA=12V, IA=1A
Non-trigger gate voltage
Thermal resistance
Junction to heat sink
Mounting force
Stored temperature
W eight
VDM=67%VDRM
At 1800 sine, double side cooled
Clamping force 15KN
KT33cT
125 500 A/μs
125
35
25 0.8
137
15
1027
250
2.5
A
µs
µC
mA
V
20 200 mA
125 0.3
V
0.035 °C /W
10
-40
260
20
140
KN
°C
g
http://www.tech-sem.com
Page 1 of 3

Y35KPC Datasheet
Peak On-state VoltageYV3s5.KPPeCak On-state Current
4
3.5 TJ=125°C
3
2.5
2
1.5
1
0.5
100
1000
10000
Instantaneous on-state currant,amperes
Fig.1
Y35KPC
Max. junction To heats0in.k0T3h5ermai Impedance Vs.Time
0.04
0.03
0.02
0.01
0
0.001
0.01
0.1 1
Time,seconds
Fig.2
10
2400
2100
1800
1500
Max. Power DissYip3a5tiKoPnCVs5.Mean On-state Current
0 180
Conduction Angle
90 120
60
180
1200
900
30
600
300
0
0 200 400 600 800 1000 1200
Mean on-state current,amperes
Fig.3
Max. heatsink TempeYr3at5uKrePCVs3.Mean On-state Current
140
120
0 180
100
Conduction Angle
80
60
40
20 30 60 90 120 180
0
0 200 400 600 800 1000 1200 1400
Mean on-state current,amperes
Fig.4
1200
1000
800
600
400
Max. Power DissYip3a5tiKonPCVs5.Mean On-state Current
DC
360
Conduction Angle
60
180
120
90
270
30
200
0
0 200 400 600 800 1000
Mean on-state current,amperes
Max. heatsink TemperatureYV3s5.MKPeCan5On-state Current
140
120 360
100
Conduction Angle
80
60
40
20
0
0
30 60 90 120 180 270 DC
400 800 1200 1600
Mean on-state current,amperes
2000
Fig.5
http://www.tech-sem.com
Page 2 of 3
Fig.6


Features Datasheet pdf TECHSEM Features: n Center amplifying gate n Metal case with ceramic insulat or n Low on-state and switching losses Typical Applications n AC controllers n DC and AC motor control n Controlled r ectifiers Y35KPC PHASE CONTROL THYRIST OR IT(AV) VDRM/VRRM ITSM I2t 1076A 40 0~1000V 11 KA 605 103A2S SYMBOL CHARA CTERISTIC IT(AV) Mean on-state curren t TEST CONDITIONS Tj(°C) Min VALUE Type Max 180° half sine wave 50Hz Dou ble side cooled, Ths=55°C Ths=102°C 125 1076 500 UNIT A VDRM VRRM IDRM IRRM ITSM I2t VTO rT VTM dv/dt Repetit ive peak off-state voltage Repetitive p eak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V Repetitive p eak current Surge on-state current I2T for fusing coordination Threshold volta ge On-state slop resistance Peak on-sta te voltage VDM= VDRM VRM= VRRM 10ms ha lf sine wave VR=0.6VRRM ITM=1500A, F=15 KN Critical rate of rise of off-state voltage VDM=0.67VDRM 125 400 125 125 1 25 125 125 1000 V 40 mA 11.0 605 0.80 0.40 1.80 KA A2s*103 V mΩ .
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