72T03GH AP72T03GH Datasheet

72T03GH Datasheet, PDF, Equivalent


Part Number

72T03GH

Description

AP72T03GH

Manufacture

Advanced Power Electronics

Total Page 4 Pages
Datasheet
Download 72T03GH Datasheet


72T03GH
Advanced Power
Electronics Corp.
AP72T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T03GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
9mΩ
62A
GD
S
TO-252(H)
G
D
S
TO-251(J)
Rating
30
+ 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
.
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.5
62.5
110
Units
/W
/W
/W
1
200902263

72T03GH
AP72T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=30A
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=24V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- 8 9 m
- 11 15 m
1 - 3V
- 37 -
S
- - 1 uA
- - +100 nA
- 15 24 nC
- 3 - nC
- 10 - nC
- 8 - ns
- 82 - ns
- 20 - ns
- 8 - ns
- 930 1490 pF
- 250 - pF
- 180 - pF
- 0.9 1.4 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 28 - ns
- 22 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP72T0 3GH/J RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simp le Drive Requirement ▼ Low On-resista nce ▼ Fast Switching Characteristic G D S Description Advanced Power MOSF ETs from APEC provide the designer with the best combination of fast switching , ruggedized device design, low on-resi stance and cost-effectiveness. The TO- 252 package is widely preferred for com mercial-industrial surface mount applic ations and suited for low voltage appli cations such as DC/DC converters. The t hrough-hole version (AP72T03GJ) are ava ilable for low-profile applications. A bsolute Maximum Ratings Symbol Parame ter VDS VGS ID@TC=25℃ ID@TC=100℃ I DM PD@TC=25℃ EAS IAR TSTG TJ Drain-S ource Voltage Gate-Source Voltage Conti nuous Drain Current, VGS @ 10V Continuo us Drain Current, VGS @ 10V Pulsed Drai n Current1 Total Power Dissipation Line ar Derating Factor Single Pulse Avalanc he Energy3 Avalanche Current Storage Temperature Range Operating Junction T.
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