Purpose Transistors. SBC847BDW1T1G Datasheet

SBC847BDW1T1G Transistors. Datasheet pdf. Equivalent

SBC847BDW1T1G Datasheet
Recommendation SBC847BDW1T1G Datasheet
Part SBC847BDW1T1G
Description Dual General Purpose Transistors
Feature SBC847BDW1T1G; BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G Dual.
Manufacture ON Semiconductor
Datasheet
Download SBC847BDW1T1G Datasheet




ON Semiconductor SBC847BDW1T1G
BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT363/SC88 which is
designed for low power surface mount applications.
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector Emitter Voltage
VCEO
65
45
30
V
Collector Base Voltage
VCBO
80
50
30
V
Emitter Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current
Continuous
IC 100 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device
FR5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
380 mW
250 mW/°C
3.0 mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
°C/W
328
Junction and Storage Temperature
Range
TJ, Tstg 55 to +150
°C
1. FR5 = 1.0 x 0.75 x 0.062 in
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT363
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 9
1
Publication Order Number:
BC846BDW1T1/D



ON Semiconductor SBC847BDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CEO
V
65
45
30
Collector Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CES
V
80
50
30
Collector Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CBO
V
80
50
30
Emitter Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)EBO
V
6.0
6.0
5.0
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
15 nA
5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
hFE
150
270
200 290 450
420 520 800
Collector Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
VCE(sat)
V
0.25
0.6
VBE(sat)
0.7
0.9
V
VBE(on)
mV
580 660 700
− − 770
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
pF
4.5
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
dB
10
http://onsemi.com
2



ON Semiconductor SBC847BDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS BC846BDW1T1G, SBC846BDW1T1G
600
500
150°C
400
VCE = 5 V
300 25°C
200 55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at VCE = 5 V
1
600
500
150°C
400
300 25°C
VCE = 10 V
200 55°C
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain at VCE = 10 V
1
0.25
0.20
IC/IB = 10
0.15
0.10
0.05
0.00
0.0001
25°C
150°C
55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 3. VCE(sat) at IC/IB = 10
0.3
0.25
IC/IB = 20
0.2
0.15
0.1
25°C
150°C
0.05
0
0.1 0.0001
55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat) at IC/IB = 20
1.10
1.00
0.90
IC/IB = 10
55°C
0.80 25°C
0.70
0.60 150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 5. VBE(sat) at IC/IB = 10
1.10
1.00
IC/IB = 20
0.90
0.80 55°C
0.70 25°C
0.60
0.50
0.40 150°C
0.30
0.20
0.1 0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 6. VBE(sat) at IC/IB = 20
http://onsemi.com
3
0.1
0.1







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