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IPD35N10S3L-26
Power-Transistor
Description
OptiMOS®-T Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum r...
Infineon Technologies
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IPD35N10S3L-26
Power-Transistor
- Infineon Technologies
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