IPI80N06S4-05 Datasheet PDF


Part Number

IPI80N06S4-05

Description

Power-Transistor

Manufacture

Infineon

Total Page 9 Pages
PDF Download
Download IPI80N06S4-05 Datasheet PDF


Features Datasheet pdf OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C p eak reflow • 175°C operating tempera ture • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4- 05 IPI80N06S4-05, IPP80N06S4-05 Produc t Summary V DS R DS(on),max (SMD versio n) ID 60 V 5.4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N 06S4-05 IPI80N06S4-05 IPP80N06S4-05 Pa ckage PG-TO263-3-2 PG-TO262-3-1 PG-TO22 0-3-1 Marking 4N0605 4N0605 4N0605 Ma ximum ratings, at T j=25 °C, unless ot herwise specified Parameter Symbol C onditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Av.
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IPI80N06S4-05 Datasheet
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4-05
IPI80N06S4-05, IPP80N06S4-05
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
5.4 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S4-05
IPI80N06S4-05
IPP80N06S4-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0605
4N0605
4N0605
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
80
75
320
152
80
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-24




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