NCE8098 Datasheet PDF


Part Number

NCE8098

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE8098 NCE N-Channel Enhancement Mod e Power MOSFET DESCRIPTION The NCE8098 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge. It can be used in a wid e variety of applications. GENERAL FEA TURES ● VDS =80V,ID =98A RDS(ON) < 7. 5mΩ @ VGS=10V (Typ:6mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche volt age and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● S pecial process technology for high ESD capability Schematic diagram Applicat ion ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterrupt.
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NCE8098 Datasheet
http://www.ncepower.com
Pb Free Product
NCE8098
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE8098 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =80V,ID =98A
RDS(ON) < 7.5m@ VGS=10V
(Typ:6m)
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE8098
NCE8098
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
80
±20
98
70
520
200
1.33
800
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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