NCE80H12 Datasheet PDF


Part Number

NCE80H12

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE80H12 NCE N-Channel Enhancement Mo de Power MOSFET DESCRIPTION The NCE80H1 2 uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. It can be used in a w ide variety of applications. GENERAL F EATURES ● VDS =80V,ID =120A RDS(ON) < 6mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanch e voltage and current ● Good stabilit y and uniformity with high EAS ● Exce llent package for good heat dissipation ● Special process technology for hig h ESD capability Application ● Power switching application ● Hard Switche d and High Frequency Circuits ● Uninterruptible Power .
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NCE80H12 Datasheet
http://www.ncepower.com
Pb Free Product
NCE80H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H12 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =80V,ID =120A
RDS(ON) <6m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE80H12
NCE80H12
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
80
±20
120
84
450
220
1.47
1400
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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