NCE6020L Datasheet PDF


Part Number

NCE6020L

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6020L NCE N-Channel Enhancement Mo de Power MOSFET DESCRIPTION The NCE6020 L uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. It can be used in a w ide variety of applications. GENERAL F EATURES ● VDS =60V,ID =20A RDS(ON) <4 5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanch e voltage and current ● Good stabilit y and uniformity with high EAS ● Exce llent package for good heat dissipation ● Special process technology for hig h ESD capability Application ● Power switching application ● Hard Switche d and High Frequency Circuits ● Uninterruptible Power .
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NCE6020L Datasheet
http://www.ncepower.com
Pb Free Product
NCE6020L
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6020L uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =60V,ID =20A
RDS(ON) <45m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251S top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6020L
NCE6020L
TO-251S
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
60
±20
20
14
60
40
0.27
72
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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