NCE7560K Datasheet PDF


Part Number

NCE7560K

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com NCE7560K Pb-Fre e Product NCE N-Channel Enhancement Mo de Power MOSFET General Description Th e NCE7560K uses advanced trench technol ogy and design to provide excellent RDS (ON) with low gate charge. It can be us ed in a wide variety of applications. Product Summary BVDSS typ. RDS(ON) typ . max. ID 84 6.8 8.5 60 V mΩ mΩ A Features ● VDS=75V;ID=60A@ VGS=10 V; RDS(ON)<8.5mΩ @ VGS=10V ● Spec ial process technology for high ESD cap ability ● Special designed for Conver tors and power controls ● High densit y cell design for ultra low Rdson ● F ully characterized Avalanche voltage an d current ● Good stability and unifor mity with high EAS ● Excellent package for good heat dissi.
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NCE7560K Datasheet
http://www.ncepower.com
NCE7560K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
6.8
8.5
60
V
m
m
A
Features
VDS=75VID=60A@ VGS=10V
RDS(ON)<8.5m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7560K
NCE7560K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
60
42
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1




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