NCE75H21B Datasheet PDF


Part Number

NCE75H21B

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE75H21B NCE N-Channel Enhancement M ode Power MOSFET Description The NCE75H 21B uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =210A RDS(ON ) < 4.5mΩ @ VGS=10V (Typ:3.8mΩ) S chematic diagram ● Special process t echnology for high ESD capability ● H igh density cell design for ultra low R dson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excell ent package for good heat dissipation A pplication ● Power switching applicat ion ● Hard switched and high frequency circuits ● Unin.
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NCE75H21B Datasheet
http://www.ncepower.com
Pb Free Product
NCE75H21B
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21B uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 75V,ID =210A
RDS(ON) < 4.5m@ VGS=10V
(Typ:3.8m)
Schematic diagram
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21B
NCE75H21B
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
75
±20
210
148
850
310
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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