(PDF) IPB120P04P4-04 Datasheet PDF | Infineon





IPB120P04P4-04 Datasheet PDF

Part Number IPB120P04P4-04
Description Power-Transistor
Manufacture Infineon
Total Page 9 Pages
PDF Download Download IPB120P04P4-04 Datasheet PDF

Features: Datasheet pdf OptiMOS®-P2 Power-Transistor Features P-channel - Normal Level - Enhanceme nt mode • AEC qualified • MSL1 up t o 260°C peak reflow • 175°C operati ng temperature • Green package (RoHS compliant) • 100% Avalanche tested I PB120P04P4-04 IPI120P04P4-04, IPP120P04 P4-04 Product Summary V DS R DS(on) (S MD Version) ID -40 V 3.5 mW -120 A PG -TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 T ype IPB120P04P4-04 IPI120P04P4-04 IPP12 0P04P4-04 Package PG-TO263-3-2 PG-TO26 2-3-1 PG-TO220-3-1 Marking 4P0404 4P04 04 4P0404 Maximum ratings, at T j=25 C, unless otherwise specified Paramet er Symbol Conditions Continuous drai n current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain c urrent2) I D,pulse T C=25°C Avalanch e energy, single pulse E AS I D=-60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power d issipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value -120 -110 -480 78.

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IPB120P04P4-04 datasheet
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB120P04P4-04
IPI120P04P4-04, IPP120P04P4-04
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
3.5 mW
-120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120P04P4-04
IPI120P04P4-04
IPP120P04P4-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P0404
4P0404
4P0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-120
-110
-480
78
-120
±20
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-14

IPB120P04P4-04 datasheet
IPB120P04P4-04
IPI120P04P4-04, IPP120P04P4-04
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
-
-
- - 1.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA
V GS(th) V DS=V GS, I D=-340µA
I DSS
V DS=-32V, V GS=0V,
T j=25°C
V DS=-32V, V GS=0V,
T j=125°C2)
I GSS
V GS=-20V, V DS=0V
R DS(on) V GS=-10V, I D=-100A
V GS=-10V, I D=-100A,
SMD version
-40
-2.0
-
-
-
-
-
-
-3.0
-0.05
-20
-
2.9
2.6
-V
-4.0
-1 µA
-200
-100 nA
3.8 mW
3.5
Rev. 1.0
page 2
2011-02-14




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