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IPB180N10S4-02

Infineon

Power-Transistor


Description
OptiMOSTM-T2 Power-Transistor Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mW 180 A PG-TO263-7-3 Type IPB180N10S4-02 Package Marking PG-TO263-7-3 4N1002 Maximum ratings, at T j=...



Infineon

IPB180N10S4-02

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