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N-Channel MOSFET. MDF8N60 Datasheet

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N-Channel MOSFET. MDF8N60 Datasheet






MDF8N60 MOSFET. Datasheet pdf. Equivalent




MDF8N60 MOSFET. Datasheet pdf. Equivalent





Part

MDF8N60

Description

N-Channel MOSFET



Feature


MDF8N60 N-channel MOSFET 600V MDF8N60 N -Channel MOSFET 600V, 8A, 1.0Ω Gener al Description The MDF8N60 uses advance d MagnaChip’s MOSFET Technology, whic h provides low on-state resistance, hig h switching performance and excellent q uality. MDF8N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 8.
Manufacture

MagnaChip

Datasheet
Download MDF8N60 Datasheet


MagnaChip MDF8N60

MDF8N60; .0A RDS(ON) ≤ 1.0Ω Applications @ T jmax @ VGS = 10V @ VGS = 10V Power Sup ply PFC High Current, High Speed Switch ing G DS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-So urce Voltage @ Tjmax Gate-Source Voltag e Characteristics Continuous Drain Cu rrent (※) Pulsed Drain Current(1) P ower Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode.


MagnaChip MDF8N60

Recovery dv/dt(3) Single Pulse Avalanch e Energy(4) Junction and Storage Temper ature Range ※ Id limited by maximum j unction temperature TC=25oC TC=100oC T C=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt E AS TJ, Tstg Rating 600 660 ±30 8.0 4. 9 32 46 0.37 4.6 4.5 320 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Ther mal Characteristics C.


MagnaChip MDF8N60

haracteristics Thermal Resistance, Junct ion-to-Ambient(1) Thermal Resistance, J unction-to-Case(1) Nov2009. Version 2.2 1 Symbol RθJA RθJC Rating 62.5 2. 71 Unit oC/W MagnaChip Semiconductor Ltd. MDF8N60 N-channel MOSFET 600V Or dering Information Part Number MDF8N60 TH Temp. Range -55~150oC Package TO-2 20F Packing Tube RoHS Status Halogen Free Electrical Cha.

Part

MDF8N60

Description

N-Channel MOSFET



Feature


MDF8N60 N-channel MOSFET 600V MDF8N60 N -Channel MOSFET 600V, 8A, 1.0Ω Gener al Description The MDF8N60 uses advance d MagnaChip’s MOSFET Technology, whic h provides low on-state resistance, hig h switching performance and excellent q uality. MDF8N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 8.
Manufacture

MagnaChip

Datasheet
Download MDF8N60 Datasheet




 MDF8N60
MDF8N60
N-Channel MOSFET 600V, 8A, 1.0
General Description
The MDF8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 8.0A
RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
MagnaChip Semiconductor Ltd.




 MDF8N60
Ordering Information
Part Number
MDF8N60TH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4.0A
VDS = 30V, ID = 4.0A
VDS = 480V, ID = 8.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 8.0A,
RG = 25Ω(3)
IS = 8.0A, VGS = 0V
IF = 8.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 8.0A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=9.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
600 -
3.0 -
-
V
5.0
- - 1 µA
- - 100 nA
0.85 1.0
- 8.5 - S
- 21 -
- 6.2 - nC
- 8.6 -
- 895
-5
pF
- 105
- 26
- 42
- 43
ns
- 27
- 11 - A
- 1.4 V
- 350
ns
- 3.3
µC
Nov2009. Version 2.2
2 MagnaChip Semiconductor Ltd.




 MDF8N60
15
14 Vgs=5.5V
13 =6.0V
=6.5V
12 =7.0V
11 =8.0V
10 =10.0V
=15.0V
9
8
7
6
5
4
3 Notes
2
1. 250PulseTest
2. TC=25
1
5 10 15 20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 4.0A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
2.0
1.8
1.6
1.4
1.2 VGS=10.0V
VGS=20V
1.0
0.8
0.6
0 5 10 15
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.2
Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150
25
-55
1
Notes :
1. VGS = 0 V
10 2. ID = 250
150
25
1
0.1
246
VGS [V]
Fig.5 Transfer Characteristics
8
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov2009. Version 2.2
3 MagnaChip Semiconductor Ltd.



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