K1062 Datasheet (data sheet) PDF





K1062 Datasheet, 2SK1062

K1062   K1062  

Search Keywords: K1062, datasheet, pdf, Toshiba, 2SK1062, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed S witching Applications Analog Switching Applications Interface Applications 2S K1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forw ard transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistanc e: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementa ry to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gat e-source voltage Drain current DC Pul se Drain power dissipation (Ta = 25°C ) Channel temperature Storage tempera ture range VDS VGSS ID IDP PD Tch Tstg

K1062 Datasheet, 2SK1062

K1062   K1062  
60 ±20 200 800 200 150 −55~150 V V mA mW °C °C JEDEC ― JEITA SC-5 9 TOSHIBA 2-3F1F Weight: 0.012 g (ty p.) Note: Using continuously under hea vy loads (e.g. the application of high temperature/current/voltage and the sig nificant change in temperature, etc.) m ay cause this product to decrease in th e reliability significantly even if the operating conditions (i.e. operating t emperature/current/voltage, etc.) are w ithin the absolute maximum ratings. Ple ase design the appropriate reliability upon reviewing the Toshiba Semiconducto r Reliability Handbook (“Handling Pre cautions”/“Derating Concept and Met hods”) and individual reliability dat a (i.e. reliability test report and est imated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leak age current Drain cut-off current Drain -source breakdown voltage Gate threshol d voltage Forward transfer admittance D rain-source ON resistance Drain-source ON voltage Input capacitance Reverse tr ansfer capacitance Output capacitance R ise time Symbol Test Condition IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 mA, VGS = 10 V VDS = 10 V,








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)