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HFW9N50

N-Channel MOSFET

Description

HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Ar...

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