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HFW10N60

N-Channel MOSFET

Description

HFW10N60 Sep 2009 HFW10N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 44 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON...

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