· High breakdown votlage.
· Adoption of MBIT process.
· Excellent hFE linearlity.
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffuesd Planar Silicon Transistor
High-Voltage Driver Applications
3 1.5 2
( ) : 2SA1740
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Mounted on ceramic board (250mm2×0.8mm)
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
ICBO VCB=(–)300V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)50mA
* The 2SA1740/2SC4548 are classified by 50mA hFE as follows :
hFE 60 to 120 100 to 200
min typ max
Continued on next page.
Marking 2SA1740 : AK
2SC4548 : CN
hFE rank : D, E
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/83098HA (KT)/7219YT, TS No.3188-1/4