A1933 Datasheet (data sheet) PDF - Toshiba Semiconductor





A1933 Datasheet - 2SA1933

A1933   A1933  

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 H igh-Current Switching Applications Ind ustrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • Hig h-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175 Ab solute Maximum Ratings (Ta = 25°C) Ch aracteristics Symbol Rating Unit Col


Manufacture Part Number Description

Toshiba

A1933

2SA1933




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