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FQA7N65C
650V N-Channel MOSFET
Description
FQA7N65C 650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET Features 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability February 2006 QFET ® Description These N-Channel enhancement mode power field effect
transistor
s are produced using ...
Fairchild Semiconductor
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