INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD858
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collect...
