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MRFE6VP100HSR5

Part Number	MRFE6VP100HSR5
Manufacturer	Freescale Semiconductor
Description	RF Power LDMOS Transistors
Published	Jul 21, 2015
Detailed Description	Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral ...
Datasheet	MRFE6VP100HSR5 PDF File

Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.
8 to 2000 MHz.
These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dBc) 30--512 (1,3) Two--Tone (100 kHz spacing) 100 PEP 19.
0 30.
0 --30 512 (2) CW 100 27.
2 70.
0 — 512 (2) Pulse (200 μsec, 20% 100 Peak Duty Cycle) 26.
0 ...

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MRFE6VP100HSR5 RF Power LDMOS Transistors - Freescale Semiconductor

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