RJK03M9DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 9.2 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 78
Preliminary Datasheet
R07DS0775EJ0120...
