DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2210T1M
P-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2210T1M is P-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as load switch.
FEATURES Low on-state resistance
RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5...
