RJK03M7DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 8.0 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
Preliminary Datasheet
R07DS0773EJ0110 Rev.1.10
Feb 22, 2012
RENESAS Package code: PWSN0008DE-A (Packag...
